 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features * High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz * High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz * Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz * High Gain-Bandwidth Product: 8.0 GHz Typical fT * Cost Effective Ceramic Microstrip Package different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42035 bipolar transistor is fabricated using Hewlett- Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 35 micro-X Package Description Hewlett-Packard's AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many 4-159 5965-8911E AT-42035 Absolute Maximum Ratings [1] Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature[4] Units V V V mA mW C C Absolute Maximum 1.5 20 12 80 600 200 -65 to 200 Thermal Resistance [2,5]: jc = 175C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 5.7 mW/C for TC > 95C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 200C. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications, TA = 25C Symbol |S21E|2 P1 dB G1 dB NFO GA fT hFE ICBO IEBO CCB Parameters and Test Conditions[1] Insertion Power Gain; VCE = 8 V, IC = 35 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA Gain @ NFO; VCE = 8 V, IC = 10 mA Gain Bandwidth Product: VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB dB GHz -- A A pF 30 Min. 10.0 Typ. Max. 11.0 5.0 21.0 20.5 14.0 9.5 2.0 3.0 13.5 10.0 8.0 150 270 0.2 2.0 0.28 Notes: 1. For this test, the emitter is grounded. 4-160 AT-42035 Typical Performance, TA = 25C 20 P1 dB (dBm) 1.0 GHz 24 2.0 GHz 24 P1 dB (dBm) 20 16 12 2.0 GHz P1dB 10 V 6V 4V 16 |S21E|2 GAIN (dB) 20 4.0 GHz P1dB 12 2.0 GHz 16 8 G1 dB (dB) 4.0 GHz 12 G1 dB (dB) G1dB 16 14 G1dB 10 V 6V 4V 4 8 4.0 GHz 12 10 0 10 20 30 IC (mA) 40 0 0 10 20 30 IC (mA) 40 50 4 0 10 20 30 IC (mA) 40 50 50 Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 40 35 30 MSG 24 21 GA 18 GAIN (dB) 15 12 9 6 NFO GAIN (dB) 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) MAG |S21E|2 4 3 2 1 1.0 2.0 0 3.0 4.0 5.0 NFO (dB) 3 0 0.5 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. 4-161 AT-42035 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .72 -46 28.3 26.09 152 0.5 .59 -137 20.9 11.13 102 1.0 .56 -171 15.4 5.91 80 1.5 .56 169 12.1 4.03 67 2.0 .58 155 9.7 3.06 55 2.5 .59 147 8.0 2.50 48 3.0 .61 137 6.5 2.10 38 3.5 .63 128 5.2 1.82 27 4.0 .63 117 4.0 1.60 17 4.5 .63 106 3.1 1.43 7 5.0 .64 93 2.3 1.30 -3 5.5 .67 79 1.5 1.19 -13 6.0 .72 70 0.6 1.07 -23 dB -37.0 -31.0 -28.2 -26.6 -24.2 -22.6 -20.8 -19.6 -18.0 -16.5 -15.4 -14.3 -13.4 S12 Mag. .014 .028 .039 .047 .062 .074 .092 .105 .126 .149 .169 .193 .215 S22 Ang. 73 44 47 52 55 61 65 62 57 53 48 41 35 Mag. .92 .58 .51 .50 .48 .47 .46 .47 .49 .51 .52 .51 .46 Ang. -14 -27 -29 -33 -38 -42 -51 -63 -72 -80 -87 -94 -105 AT-42035 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .50 -88 33.2 45.64 135 0.5 .52 -164 22.4 13.24 92 1.0 .53 174 16.6 6.75 76 1.5 .53 160 13.1 4.55 64 2.0 .55 148 10.8 3.45 53 2.5 .57 142 9.0 2.81 47 3.0 .59 134 7.5 2.37 37 3.5 .60 125 6.3 2.06 27 4.0 .60 116 5.2 1.81 17 4.5 .60 104 4.2 1.62 7 5.0 .61 92 3.4 1.47 -2 5.5 .64 79 2.6 1.35 -13 6.0 .69 70 1.7 1.21 -23 A model for this device is available in the DEVICE MODELS section. dB -42.0 -32.8 -28.2 -25.6 -23.2 -21.6 -20.0 -18.4 -17.0 -16.0 -14.9 -14.1 -13.2 S12 Mag. .008 .023 .039 .053 .069 .084 .101 .120 .141 .158 .179 .198 .219 S22 Ang. 68 57 63 66 65 67 64 61 57 50 45 37 30 Mag. .77 .45 .42 .41 .41 .39 .38 .39 .41 .43 .44 .43 .38 Ang. -22 -25 -26 -30 -36 -40 -49 -61 -71 -78 -84 -91 -102 AT-42035 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.0 1.1 1.3 2.0 3.0 opt Mag .04 .04 .07 .20 .51 Ang 10 66 150 -178 -110 RN/50 0.13 0.12 0.12 0.12 0.36 4-162 35 micro-X Package Dimensions .085 2.15 4 EMITTER .083 DIA. 2.11 016 1 3 .020 .508 2 EMITTER Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .057 .010 1.45 .25 .100 2.54 .022 .56 .455 .030 11.54 .75 .006 .002 .15 .05 420 BASE COLLECTOR 4-163 |
Price & Availability of AT-42035
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |